GALVANOMAGNETIC PROPERTIES OF PLASTICALLY DEFORMED InSb
نویسندگان
چکیده
n and p type InSb single crystals with as low as available initial carrier concentrations and dislocation densities were deformed by torsion or uniaxial compression. Hall effect and conductivity measurements exhibit a large decrease of the free carrier concentration and their mobilities for edge dislocations when the ratio between the carrier concentration and the dislocation density is not too high. Screw dislocations have been seen to inverse the type of the as-grown material for n-type InSb. Results are discussed in terms of position, occupation rate and localization of energy states introduced in the band gap.
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